Amdahl's figure of merit, SiGe HBT BiCMOS, and 3D chip stacking
نویسندگان
چکیده
Forty years ago Gene Amdahl published a figure of merit for parallel computation, which proved extremely controversial. The controversy still rages today, although those that have looked closely at this figure of merit conclude that it is correct, but perhaps misinterpreted. In this paper we will look at a small variation on that law that suggests computer designers should take a closer look at two emerging technologies, SiGe HBT BiCMOS and 3D chip stacking. We may be overlooking a way to continue the clock race, and in so doing accomplish better parallelism.
منابع مشابه
65GHz Doppler Sensor with On-Chip Antenna in 0.18μm SiGe BiCMOS
A single-chip 65GHz Doppler radar transceiver with on-chip patch antenna is reported. Implemented in a production 0.18μm SiGe BiCMOS process, it features a differential output transmit power of 4.3dBm, 16.5dB singleended down-conversion gain and a double-sideband noise figure of 12.8dB. The radar includes a 65GHz 2-stage cascode LNA with S11<-15dB at 50-94GHz and 14dB gain at 65GHz, a double-ba...
متن کاملSiGe HBT wideband amplifier for millimeter wave applications
A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz f t SiGe BiCMOS technology. Die size was 0.7×0.73 mm. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author’s best knowledge this is the hi...
متن کاملA 2.4-GHz LNA: Design, Simulation, and Comparison in 0.2-μm GaAs p-HEMT Process and 0.35-μm SiGe BiCMOS HBT Process
An LNA design and simulation using ED02AH Technology in 0.2-μm GaAs Pseudomorphic HEMT process and 0.35-μm HBT SiGe BiCMOS process are reported as a case of comparison. This work uses an identical circuit topology for both processes which is a 3-volt two stage cascode single-ended topology with a resistive shunt feedback. This LNA is developed for 2.4 GHz ISM band applications. This letter desc...
متن کاملA 32 GHz Low-Power Low-Phase-Noise VCO Implemented in SiGe BiCMOS Technology
—A low-phase-noise, low-power Ka-band VoltageControlled Oscillator (VCO) using cross-coupled pair configuration is presented. The Ka-band VCO circuit uses 0.18 μm SiGe BiCMOS technology. The VCO has low phase noise of -114.6 dBc/Hz at 1 MHz offset from 32.12 GHz carrier frequency and can be tuned from 30.17 to 33.48 GHz. The figure of merit is -202.1 dBc/Hz. The power consumption of the VCO wi...
متن کاملStatus and Application of Advanced Semiconductor Technologies
GaAs HBT technology is being challenged for existing and new product applications. SiC FETs and GaN HEMTs have been shown to have significant power delivery advantage when large supply voltages are required. InP HBTs are emerging as the next technology for very high-speed applications. After years of promise and controversy, the SiGe HBT is beginning to be applied in high-performance systems. P...
متن کامل